半導体シリコンウエハの量産対応両面研磨法 : エッチしたウエハ粗面の平滑化過程を考慮した片面鏡面化技術

概要

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This paper deals with double-sided polishing technology used in Si wafer production lines. The surface roughness and flatness of Si wafers, polished on a double-sided polishing machine with etched wafers, were examined, in order to obtain a mirror surface on one side for fabricating semiconductor elements, and a rough surface on the reverse side for guarding against defects generated in the VLSI production lines. The difference in roughness between the two surfaces depends not on the fact that two kinds of polishers are being used, but on the large variation in the polishing velocity applied to the upper plate and to the lower one. A rough surface of 1.2 μmR_<max> was produced without any effects on the roughness and flatness of the mirror surface by using different polishing speeds for each side.
公益社団法人精密工学会の論文
1993-07-05