ダイヤモンドの微細成形加工(第3報) : 酸化けい素蒸着膜工具の経時変化

概要

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In the polishing method of a diamond stylus for video disk player (CED type) using siliconoxide deposited polishing disk, stock removal rate of the diamond stylus reduces with elapsed time after the deposition. To clarify this phenomenon, change of the deposited siliconoxide is discussed experimentally in this paper. IR absorption analysis is carried out to investigate H_2O absorption, Si-OH generation and oxidation of Si in the siliconoxide deposited. In the optimum siliconoxide that is deposited with SiO_2 in O_2 plasma, H_2O absorption is started just after the deposition, although, the oxidation of Si is not generated until 300 hours elapsing after the deposition. Mechanical strength of the siliconoxide deposited increases with the elapsed time after the deposition, however, dynamic friction coefficient reduces to 0.01 from 0.1 with 5 days elapsing after the deposition owing to increment of H_2O and Si-OH. This is a reason for the reduction of the stock removal rate with the passage time from the deposition. It is important to deposit the siliconoxide just before the polishing of diamond stylus in this polishing method.
公益社団法人精密工学会の論文
1990-09-05