シリコンウエハの鏡面仕上(第1報) : ポリシャ表面温度の変化過程について

概要

論文の詳細を見る
This paper deals with the effect of the factors governing polisher surface temperature, which is strongly correlated with stock removal rate, on the mirror polishing of Si wafers. The factors investigated here are the coefficient of friction between the polisher and the Si wafer, the temperature of the polishing reagent, and the polishing area ratio, which is defined as the ratio of the total wafer polishing area on a polisher relative to the effective area of the polisher. The increase of these parameters promotes the chemical reaction between the Si wafers and either the polishing reagent or the polisher, and results in improving the stock removal rate. The polisher surface temperature, indicative of the chemical activity, can be easily controlled by the temperature of the polishing reagent, and as a result a stock removal rate more than 4 times higher can be achieved without deterioration in quality of Si wafers.
公益社団法人精密工学会の論文
1989-06-05