プラズマ陰極型イオン源で作成したSiO_2薄膜の光学特性

概要

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A model ion source with a plasma cathode instead of a hot cathode is proposed. This has a long-lifetime (more than 100 hours) against oxygen ion, so that it is possible to generate various kinds of ion species. The ion-current density in a circular area of 150 mm diameter at a distance 200 mm from the ion source has uniformity better than 0.85 (minimum density / maximum density). Ion energy is approximately equal to the voltage of an outlet electrode (<100eV). In this study, the optical properties of SiO_2 thin films, which are produced by reactive evaporation and oxygen ion-beam assisted deposition at ambient room temperature, were determined by measuring the transmittance and refractive index. Results obtained that oxygen ion-beam assistance decreases absorption and reflactive index near bulk is achieved. Furthermore, the structure of these SiO_2 thin films is studied by means of ESCA, SEM and infrared spectroscopic methods. Analysis shows that thin films with higher packing density are obtained by oxygen ion-beam assistance and have a bulk-like structure.
東海大学の論文