Temperature Dependence of Near Band-edge Luminescence in ZnSe
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概要
- 論文の詳細を見る
Photo-luminescence near the band-edge region for undoped ZnSe single crystals are studied for a wide temperature range between 4 K and 200 K. Luminescence lines due to the recombination of bound excitons disappear between 50 K and 80 K because of the thermal dissociation and the polariton plays an important role in the near band-edge luminescence process even at higher temperature.
- 岡山理科大学の論文
- 1987-03-05
著者
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斉藤 博
岡山理大
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平松 惇
岡山大教養
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大森 健三
岡山理大理
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大森 健三
岡山理科大学応用物理学科
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大石 正和
岡山理科大学応用物理学科
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斉藤 博
岡山理科大学応用物理学科
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大石 正和
岡山大理
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平松 惇
岡山大学教養部
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斉藤 博
Department Of Material Science And Technology Nagaoka University Of Technology
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大石 正和
Department Of Applied Physics Okayama University Of Science
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