高速電子線回折によるZnSe/GaAsエピタキシャル成長薄膜の研究

概要

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Thin layer crystals of ZnSe grown by molecular beam epitaxy on GaAs substrates are studied by means of reflection high energy electron diffraction (RHEED). Observation of the RHEED patterns has revealed that something like a 3-dimensional deposition of Zn and Se atoms or molecules smoothes the GaAs substrate surface at the initial stage of the growth, and then the 2-dimensional or layer growth takes place. Besides the RHEED patterns due to the bulk crystal, additional diffraction patterns are also observed in some directions of the incident electron beams with respect to the direction of the crystal surface. These additional patterns are interpreted to the reconstruction of the surface atoms on the epitaxial layer. With the aid of luminescence properties as well as mass analyses, the obtained ZnSe crystals are found to have good enough quality.
岡山理科大学の論文
1987-03-05