II-VI族化合物結晶成長用分子線エピタキシ装置の製作
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概要
- 論文の詳細を見る
An apparatus for the crystal growth of II-VI compounds by means of molecular beam epitaxy (MBE) are reported. The apparatus consists of two vacuum chambers. One is for the crystal growth itself and the other is the sub-chamber to exchange samples without exposing the main chamber to the atmospheric pressure. The main chamber is equipped with four Knudsen-cells, a manupilator to handle samples in the vacuum. a quadrupole mass filter for the analysis of residual gasses, and a device for high energy electron diffraction (RHEED) measurements. The main chamber is evacuated by a 300l/sec turbomolecular pump, and keeps at pressure down to 10^<-10> Torr under the operating condition. The analyses by the quadrupole mass filter shows only a strong signal by H_2 molecule and a trace of CO. The apparatus is now in operation for the homoepitaxial growth of ZnSe thin films on ZnSe substrate.
- 岡山理科大学の論文
著者
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斉藤 博
岡山理大
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大森 健三
岡山理大理
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大森 健三
岡山理科大学応用物理学科
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大石 正和
岡山理科大学応用物理学科
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藤井 義弘
岡山理科大学応用物理学科
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斉藤 博
岡山理科大学応用物理学科
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大石 正和
岡山大理
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斉藤 博
Department Of Material Science And Technology Nagaoka University Of Technology
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大石 正和
Department Of Applied Physics Okayama University Of Science
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