High Mobility Exceeding 80 cm2 V-1 s-1 in Polycrystalline Ta-Doped SnO2 Thin Films on Glass Using Anatase TiO2 Seed Layers
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概要
- 論文の詳細を見る
High-mobility Ta-doped SnO2 (TTO) thin films were grown on glass substrates by pulsed laser deposition using a seed-layer technique. The use of 10-nm-thick polycrystalline anatase TiO2 seed layers was found to lead to the preferred growth of (200)-oriented TTO films, resulting in a 30% increase in the carrier density and a more than two times increase in mobility, compared to films grown directly on the glass substrates. The highest mobility obtained was 83 cm2 V-1 s-1 with a resistivity of $2.8\times 10^{-4}$ $\Omega$ cm, whereas the film with the lowest resistivity of $1.8\times 10^{-4}$ $\Omega$ cm had a mobility of 60 cm2 V-1 s-1.
- Japan Society of Applied Physicsの論文
- 2010-03-25
著者
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NAKAO Shoichiro
Kanagawa Academy of Science and Technology (KAST)
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YAMADA Naoomi
Kanagawa Academy of Science and Technology (KAST)
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HIROSE Yasushi
Kanagawa Academy of Science and Technology (KAST)
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SHIMADA Toshihiro
Kanagawa Academy of Science and Technology (KAST)
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HASEGAWA Tetsuya
Kanagawa Academy of Science and Technology (KAST)
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HITOSUGI Taro
Kanagawa Academy of Science and Technology (KAST)
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Hirose Yasushi
Kanagawa Academy Of Science And Technology
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Shimada Toshihiro
Univ. Tokyo Tokyo Jpn
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Hitosugi Taro
Tohoku Univ. Sendai Jpn
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