Order of Reaction between Photoresist and Atomic Hydrogen Generated by a Tungsten Hot-Wire Catalyst
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2010-02-25
著者
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Horibe Hideo
Kanazawa Institute Of Technology
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Yamamoto Masashi
Kanazawa Institute Of Technology
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MARUOKA Takeshi
Kanazawa Institute of Technology
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KONO Akihiko
Kanazawa Institute of Technology
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UMEMOTO Hironobu
Shizuoka University
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Yamamoto Masashi
Kanazawa Inst. Technol. Ishikawa Jpn
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Horibe Hideo
Kanazawa Inst. Technol. Ishikawa Jpn
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Kono Akihiko
Kanazawa Inst. Technol. Ishikawa Jpn
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- Order of Reaction between Photoresist and Atomic Hydrogen Generated by a Tungsten Hot-Wire Catalyst
- Substrate temperature dependence of the photoresist removal rate using atomic hydrogen generated by a hot-wire tungsten catalyst
- Relationship between the thermal hardening of ion-implanted resist and the resist removal using atomic hydrogen
- Removal of ion implanted resists with various acceleration energy using wet ozone
- Removal characteristics of resists having different chemical structures by using ozone and water
- Photoresist removal using atomic hydrogen generated by hot-wire catalyzer and effects on Si-wafer surface
- Resist removal method using Xe2 excimer ultraviolet light
- Resist removal by using wet ozone
- Substrate Temperature Dependence of the Photoresist Removal Rate Using Atomic Hydrogen Generated by a Hot-Wire Tungsten Catalyst
- Removal of Ion-implanted Resists using High Concentration Wet Ozone