Relationship between the thermal hardening of ion-implanted resist and the resist removal using atomic hydrogen
スポンサーリンク
概要
著者
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Goto Yousuke
Research Laboratory For Integrated Technological Systems Kanazawa Institute Of Technology
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Yamamoto Masashi
Kanazawa Institute Of Technology
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MARUOKA Takeshi
Research Laboratory for Integrated Technological Systems, Kanazawa Institute of Technology
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MARUOKA Takeshi
Kanazawa Institute of Technology
関連論文
- Removal of Diazonaphthoquinone/Novolak Resist Using UV Laser (266nm)
- Effect of cooling rate after polymer melting on electrical properties of high-density polyethylene/Ni composites
- Order of Reaction between Photoresist and Atomic Hydrogen Generated by a Tungsten Hot-Wire Catalyst
- Substrate temperature dependence of the photoresist removal rate using atomic hydrogen generated by a hot-wire tungsten catalyst
- Relationship between the thermal hardening of ion-implanted resist and the resist removal using atomic hydrogen
- Removal of ion implanted resists with various acceleration energy using wet ozone
- Removal characteristics of resists having different chemical structures by using ozone and water
- Photoresist removal using atomic hydrogen generated by hot-wire catalyzer and effects on Si-wafer surface
- Resist removal method using Xe2 excimer ultraviolet light
- Substrate Temperature Dependence of the Photoresist Removal Rate Using Atomic Hydrogen Generated by a Hot-Wire Tungsten Catalyst
- Study of the Removal of Ion-Implanted Resists Using Wet Ozone
- Removal of Ion-implanted Resists using High Concentration Wet Ozone
- Removal Characteristics of Resists Having Different Chemical Structures by Using Ozone and Water