Substrate Temperature Dependence of the Photoresist Removal Rate Using Atomic Hydrogen Generated by a Hot-Wire Tungsten Catalyst

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Instead of photoresist removal methods using chemicals, we investigated an environmentally friendly removal method using atomic hydrogen generated by decomposing hydrogen molecules by contact with a hot-wire tungsten catalyst. We set the distance between the catalyst and the photoresist substrate ($D_{\text{CS}}$) at 20, 60, 100 and 120 mm and evaluated the apparent activation energy ($E_{\text{AP}}$) for the reaction between photoresist and atomic hydrogen at each $D_{\text{CS}}$. The $E_{\text{AP}}$ was determined from Arrhenius plots of the photoresist removal rate against the average substrate temperature. When $D_{\text{CS}}$ was 20 and 60 mm, $E_{\text{AP}}$ decreased with increasing catalyst temperature ($\mathit{WT}=2040--2420$ °C) and was not constant. However, when $D_{\text{CS}}$ was 100 and 120 mm, $E_{\text{AP}}$ was nearly constant at $19 \pm 1$ kJ/mol without depending on $\mathit{WT}$. We might obtain the activation energy of about 19 kJ/mol in the reaction of photoresist with atomic hydrogen.
2010-01-25