Removal of Ion-implanted Resists using High Concentration Wet Ozone
スポンサーリンク
概要
著者
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Goto Yousuke
Research Laboratory For Integrated Technological Systems Kanazawa Institute Of Technology
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Kono Akihiko
Kanazawa Inst. Technol. Ishikawa Jpn
関連論文
- Effect of cooling rate after polymer melting on electrical properties of high-density polyethylene/Ni composites
- Order of Reaction between Photoresist and Atomic Hydrogen Generated by a Tungsten Hot-Wire Catalyst
- Relationship between the thermal hardening of ion-implanted resist and the resist removal using atomic hydrogen
- Removal of ion implanted resists with various acceleration energy using wet ozone
- Resist removal method using Xe2 excimer ultraviolet light
- Substrate Temperature Dependence of the Photoresist Removal Rate Using Atomic Hydrogen Generated by a Hot-Wire Tungsten Catalyst
- Study of the Removal of Ion-Implanted Resists Using Wet Ozone
- Removal of Ion-implanted Resists using High Concentration Wet Ozone
- Removal Characteristics of Resists Having Different Chemical Structures by Using Ozone and Water