Nanoscale Field Emission Triode
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概要
- 論文の詳細を見る
- 1999-09-20
著者
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AHMED H.
Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge
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Hasko D.
Microelectronics Research Centre Cavendish Laboratory
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DRISKILL-SMITH A.
Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge
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Driskill-smith A.
Microelectronics Research Centre Cavendish Laboratory University Of Cambridge
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Ahmed H.
Microelectronics Research Center Cavendish Laboratory University Of Cambridge
関連論文
- Fabrication of Free-Standing Single-Crystal Silicon Nanostructures for the Study of Thermal Transport and Defect Scattering in Low Dimensional Systems
- UHV-STM Study of Electron Emission from Individual Silicon Nanopillars
- Optimisation of Tunnel Barriers for nc-Si Single-Electron Transistors
- Structural and Electrical Characterization of Nanocrystalline Silicon (nc-Si) Single Electron Transistors
- Fabrication of Free-Standing Single-Crystal Silicon Nanostructures for the Study of Thermal Transport and Defect scattering in Low Dimensional Systems : Microfabrication and Physics
- GaAs MISFET Based Memory with a Nanocomposite Gate
- Lateral p-n Junction in High Electron-Mobility Structure
- Current Hysteresis in a Delta Doped GaAs Metal-Semiconductor Field Effect Transistor
- Nanoscale Field Emission Triode
- Rapid Electron Beam Reacted Tantalum/Titanium Bilayers on Silicon : Semiconductors and Semiconductor Devices
- Measurement of the Activation Energy of Tantalum Silicide Growth on Silicon by Rapid Electron Beam Annealing
- Single Hole Tunnelling in Side-Gated SiGe Quantum Dots
- High Speed Silicon Single-Electron Random Access Memory with Long Retention Time