Rapid Electron Beam Reacted Tantalum/Titanium Bilayers on Silicon : Semiconductors and Semiconductor Devices

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概要

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• The electrical and structural characteristics of tantalum-titanium bilayers on silicon reacted by electron beam heating have been investigated over a wide range of temperature and time conditions. The reacted layers exhibit low sheet resistance and stable electrical characteristics up to at least 1100℃. Titanium starts reacting from 750℃ onwards for 100 milliseconds reaction times whereas tantalum starts reacting only above 900℃ for such short reaction times. RBS results confirm that silicon is the major diffusing species and there is no evidence for the formation of ternary silicides. Reactions have also been explored on millisecond time scales by non-isothermal heating.

• 社団法人応用物理学会の論文
• 1988-12-20

著者

• AHMED H.

  Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge

• Mahmood F

  Cambridge Univ. Cambridge Gbr

• RAMAN V.K.

  Microelectronics Research Laboratory, Physics Department, University of Cambridge

• MAHMOOD F

  Microelectronics Research Laboratory, Physics Department, University of Cambridge

• MCMAHON R.A.

  Microelectronics Research Laboratory, Physics Department, University of Cambridge

• JEYNES C.

  Department of Electrical and Electronic Engineering, University of Surrey

• Jeynes C.

  Department Of Electrical And Electronic Engineering University Of Surrey

• Raman V.k.

  Microelectronics Research Laboratory Physics Department University Of Cambridge

• Mcmahon R.a.

  Microelectronics Research Laboratory Physics Department University Of Cambridge

• Ahmed H.

  Microelectronics Research Center Cavendish Laboratory University Of Cambridge

関連論文

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• Fabrication of Free-Standing Single-Crystal Silicon Nanostructures for the Study of Thermal Transport and Defect scattering in Low Dimensional Systems : Microfabrication and Physics
• Nanoscale Field Emission Triode
• Rapid Electron Beam Reacted Tantalum/Titanium Bilayers on Silicon : Semiconductors and Semiconductor Devices
• Measurement of the Activation Energy of Tantalum Silicide Growth on Silicon by Rapid Electron Beam Annealing
• Single Hole Tunnelling in Side-Gated SiGe Quantum Dots
• High Speed Silicon Single-Electron Random Access Memory with Long Retention Time

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