Lateral p-n Junction in High Electron-Mobility Structure
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概要
- 論文の詳細を見る
- 2001-09-25
著者
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WILLIAMS D.
Hitachi Cambridge Laboratory, Hitachi Europe Limited
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Hasko D.
Microelectronics Research Centre Cavendish Laboratory
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KAESTNER B.
Microelectronics Research Centre, Cavendish Laboratory
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Kaestner B.
Microelectronics Research Centre Cavendish Laboratory
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Williams D.
Hitachi Cambridge Laboratory Cavendish Laboratory
関連論文
- Fabrication of Free-Standing Single-Crystal Silicon Nanostructures for the Study of Thermal Transport and Defect Scattering in Low Dimensional Systems
- GaAs MISFET Based Memory with a Nanocomposite Gate
- Lateral p-n Junction in High Electron-Mobility Structure
- Current Hysteresis in a Delta Doped GaAs Metal-Semiconductor Field Effect Transistor
- Nanoscale Field Emission Triode