Measurement of the Activation Energy of Tantalum Silicide Growth on Silicon by Rapid Electron Beam Annealing

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概要

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• A rapid electron beam annealing technique has been used to induce the reaction of 1150±50Å deposited tantalum films on single crystal silicon. The annealing was carried out at temperatures ranging from 750℃ to 1000℃, in 25℃ increments, for a dwell time of 2 s in each case. The tantalum silicide films were characterized by sheet resistance measurements and Auger electron spectroscopy depth profiling. The resistivity of the completely reacted thin tantalum silicide films was 45-50 μΩ-cm. The very accurate control of the time-temperature profile that was possible in the electron beam system enabled a detailed study of the growth rate of tantalum silicide. An activation energy of 3.0-0.2 eV was deduced for the growth of tantalum disilicide from the solid-phase reaction between the metal and the silicon substrate.

• 社団法人応用物理学会の論文
• 1991-08-01

著者

• AHMED H.

  Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge

• Mahmood F.

  Microelectronics Research Centre Cavendish Laboratory Cambridge University

• SULEMAN M.

  Centre for Solid State Physics, University of the Punjab

• AHMED M.

  Centre for Solid State Physics, University of the Punjab

• Suleman M

  Centre For Solid State Physics University Of The Punjab

• Ahmed H.

  Microelectronics Research Center Cavendish Laboratory University Of Cambridge

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