Suppression of Gate Depletion in p^+-Polysilicon-Gated Sub-40nm pMOSFETs by Laser Thermal Processing
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-30
著者
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Wang Yun
Ultratech Inc.
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TALWAR Somit
Ultratech Inc.
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YAMAMOTO Tomonari
Device Development Department, Advanced LSI Development Division, FUJITSU Ltd.
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KUBO Tomohiro
Process Development Department, Advanced LSI Development Division, FUJITSU Ltd.
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OKABE Ken-ichi
Process Development Department, Advanced LSI Development Division, FUJITSU Ltd.
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SUKEGAWA Takae
Process Development Department, Advanced LSI Development Division, FUJITSU Ltd.
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LIN Tengshing
Ultratech Inc.
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KASE Masataka
Process Development Department, Advanced LSI Development Division, FUJITSU Ltd.
関連論文
- Realization of Low CoSi_2/p^+-Silicon Contact Resistance with Low Junction Leakage Current and Junction Capacitance Using Laser Thermal Process
- Suppression of Gate Depletion in p^+-Polysilicon-Gated Sub-40nm pMOSFETs by Laser Thermal Processing
- A Novel Laser Annealing Process for Advanced CMOS with Suppressed Gate Depletion and Ultra-shallow Junctions
- Suppression of Gate Depletion in p+-Polysilicon-Gated Sub-40 nm pMOSFETs by Laser Thermal Processing