LIN Tengshing | Ultratech Inc.
スポンサーリンク
概要
関連著者
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Wang Yun
Ultratech Inc.
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TALWAR Somit
Ultratech Inc.
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LIN Tengshing
Ultratech Inc.
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YAMAMOTO Tomonari
Device Development Department, Advanced LSI Development Division, FUJITSU Ltd.
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KUBO Tomohiro
Process Development Department, Advanced LSI Development Division, FUJITSU Ltd.
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OKABE Ken-ichi
Process Development Department, Advanced LSI Development Division, FUJITSU Ltd.
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SUKEGAWA Takae
Process Development Department, Advanced LSI Development Division, FUJITSU Ltd.
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KASE Masataka
Process Development Department, Advanced LSI Development Division, FUJITSU Ltd.
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Yamamoto Tomonari
Device Development Department Advanced Lsi Development Division Fujitsu Ltd.
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Okabe Ken-ichi
Process Development Department Advanced Lsi Development Division Fujitsu Ltd.
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Kubo Tomohiro
Process Development Department Advanced Lsi Development Division Fujitsu Ltd.
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Kase Masataka
Process Development Department Advanced Lsi Development Division Fujitsu Ltd.
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Sukegawa Takae
Process Development Department Advanced Lsi Development Division Fujitsu Ltd.
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Okabe Ken-ichi
Process Development Department, Advanced LSI Development Division, FUJITSU Ltd., Akiruno Technology Center, 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Yamamoto Tomonari
Device Development Department, Advanced LSI Development Division, FUJITSU Ltd., Akiruno Technology Center, 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Kubo Tomohiro
Process Development Department, Advanced LSI Development Division, FUJITSU Ltd., Akiruno Technology Center, 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Wang Yun
Ultratech Inc., San Jose, California 95134, USA
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Kase Masataka
Process Development Department, Advanced LSI Development Division, FUJITSU Ltd., Akiruno Technology Center, 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Sukegawa Takae
Process Development Department, Advanced LSI Development Division, FUJITSU Ltd., Akiruno Technology Center, 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Lin Tengshing
Ultratech Inc., San Jose, California 95134, USA
著作論文
- Suppression of Gate Depletion in p^+-Polysilicon-Gated Sub-40nm pMOSFETs by Laser Thermal Processing
- Suppression of Gate Depletion in p+-Polysilicon-Gated Sub-40 nm pMOSFETs by Laser Thermal Processing