Okabe Ken-ichi | Process Development Department, Advanced LSI Development Division, FUJITSU Ltd., Akiruno Technology Center, 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
スポンサーリンク
概要
- Okabe Ken-ichiの詳細を見る
- 同名の論文著者
- Process Development Department, Advanced LSI Development Division, FUJITSU Ltd., Akiruno Technology Center, 50 Fuchigami, Akiruno, Tokyo 197-0833, Japanの論文著者
関連著者
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Wang Yun
Ultratech Inc.
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TALWAR Somit
Ultratech Inc.
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LIN Tengshing
Ultratech Inc.
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Yamamoto Tomonari
Device Development Department Advanced Lsi Development Division Fujitsu Ltd.
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Okabe Ken-ichi
Process Development Department Advanced Lsi Development Division Fujitsu Ltd.
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Kubo Tomohiro
Process Development Department Advanced Lsi Development Division Fujitsu Ltd.
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Kase Masataka
Process Development Department Advanced Lsi Development Division Fujitsu Ltd.
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Sukegawa Takae
Process Development Department Advanced Lsi Development Division Fujitsu Ltd.
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Okabe Ken-ichi
Process Development Department, Advanced LSI Development Division, FUJITSU Ltd., Akiruno Technology Center, 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Yamamoto Tomonari
Device Development Department, Advanced LSI Development Division, FUJITSU Ltd., Akiruno Technology Center, 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Kubo Tomohiro
Process Development Department, Advanced LSI Development Division, FUJITSU Ltd., Akiruno Technology Center, 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Wang Yun
Ultratech Inc., San Jose, California 95134, USA
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Kase Masataka
Process Development Department, Advanced LSI Development Division, FUJITSU Ltd., Akiruno Technology Center, 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Sukegawa Takae
Process Development Department, Advanced LSI Development Division, FUJITSU Ltd., Akiruno Technology Center, 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Lin Tengshing
Ultratech Inc., San Jose, California 95134, USA
著作論文
- Suppression of Gate Depletion in p+-Polysilicon-Gated Sub-40 nm pMOSFETs by Laser Thermal Processing