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Surface patterning on single crystalline silicon by laser irradiation has been studied in this paper. Argon ion laser beams with a calculated spot diameter of 2.5μm were irradiated on silicon wafers, and the surfaces were observed with an AFM. When the power of the light beams were more than 3W, lines on the wafers traced by the beams extended outwards from the surface. FT-IR analysis detected very thin oxide film on the surface of the projections. Raman spectroscopy also revealed residual tensile stress in the projections. When the power was less than 3W, no deformation was found on the wafers; nevertheless, wettability, corrosion resistance and some electric characteristic changed as a result of the irradiation. In this case, the irradiated areas acted as masks for KOH etching. Washing the wafers in HF before the irradiation made the etched patterns far angular and finer than forms directly projected by laser irradiation. The method is applicable to forming of large (e.g. 30x30mm) patterns, because laser beam is able to scan large area at high speed. As an application of the method, linear encoder scales were formed.
社団法人精密工学会の論文
2005-06-05