Effect of GaN Microlens Array on Efficiency of GaN-Based Blue-Light-Emitting Diodes
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概要
- 論文の詳細を見る
In this study, GaN-based vertical light-emitting diodes (VLEDs) were fabricated by a laser lift-off (LLO) process and the effects of microlens formation by plasma etching on the optical properties of the LLO GaN-based VLED devices were investigated. By forming a 5–10 μm microlens array on the LLO GaN-based VLEDs, the measured light emission intensities at 460 nm and in the direction normal to the surface of the device increased by approximately 40% and 100% compared with those of the LLO GaN-based VLED without the microlens array for 10 μm and 5 μm microlens arrays, respectively.
- Japan Society of Applied Physicsの論文
- 2005-01-10
著者
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Kim Dongwoo
Department Of Electrical Engineering And Computer Science Hanyang University
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Yeom Geunyoung
Department Of Materials Science & Engineering Sungkyunkwan University
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Yeom Geunyoung
Department Of Materials Engineering Sungkyunkwan University
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Lee Hyoyoung
Department Of Materials Science & Engineering Sungkyunkwan University
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Cho Namgil
Department of Materials Science & Engineering, Sungkyunkwan University, Jangan-Gu Chunchun-Dong 300,
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Sung Younjoon
M&D Laboratory, Samsung Advanced Institute of Technology, San 14-1, Nongseo-Ri, Giheung-Eup, Yongin-
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Sung Younjoon
M&d Laboratory Samsung Advanced Institute Of Technology
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Kim Dongwoo
Department Of Materials Science & Engineering Sungkyunkwan University
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Cho Namgil
Department Of Materials Science & Engineering Sungkyunkwan University
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Yeom Geunyoung
Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, South Korea
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Kim Dongwoo
Department of Applied Physics, Korea University, Seoul 136-713, Korea
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