Damage during SiO_2 Etching by Low-Angle Forward Reflected Neutral Beam : Instrumentation, Measurement, and Fabrication Technology
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概要
- 論文の詳細を見る
In this study, energetic reactive radical beams were formed with SF_6 using a low-angle forward reflected neutral beam technique and the etch properties of SiO_2 and possible damage induced by the radical beam were investigated. The results showed that when SiO_2 was etched with the energetic reactive radical beams generated with SF_6, SiO_2 etch rates higher than 22nm/min could be obtained. Also, when the etch damage was studied in terms of the capacitance-voltage(C-V) and current-voltage(I-V) characteristics of metal-nitride-oxide-silicon(MNOS) and metal-oxide-silicon(MOS) devices exposed to the radical beams, nearly no etch damage could be found.
- 社団法人応用物理学会の論文
- 2002-12-01
著者
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Park S
Electronics And Telecommunications Res. Inst. Taejon Kor
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LEE Dohaing
Department of Materials Engineering, SungKyunKwan University
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CHUNG Minjae
Department of Materials Engineering, SungKyunKwan University
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PARK Sangduk
Department of Materials Engineering, SungKyunKwan University
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Yeom Geunyoung
Department of Materials Engineering, SungKyunKwan University
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Lee Dohaing
Department Of Materials Engineering Sungkyunkwan University
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Chung Minjae
Department Of Materials Engineering Sungkyunkwan University
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Yeom Geunyoung
Department Of Materials Engineering Sungkyunkwan University
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Park S
Department Of Materials Engineering Sungkyunkwan University
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- Damage during SiO_2 Etching by Low-Angle Forward Reflected Neutral Beam : Instrumentation, Measurement, and Fabrication Technology
- Effect of GaN Microlens Array on Efficiency of GaN-Based Blue-Light-Emitting Diodes
- Effects of Axial Magnetic Field on Neutral Beam Etching by Low-Angle Forward-Reflected Neutral Beam Method
- Effects of Axial Magnetic Field on Neutral Beam Etching by Low-Angle Forward-Reflected Neutral Beam Method