Effects of Axial Magnetic Field on Neutral Beam Etching by Low-Angle Forward-Reflected Neutral Beam Method
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概要
- 論文の詳細を見る
A low axial magnetic field was applied to an inductively coupled plasma (ICP) ion source used to generate a neutral beam for a low-angle forward-reflected neutral (LAFRN) beam system, and its effects on the ICP ion source and the features of Si and SiO2 etching using the LAFRN beam system for SF6 gas were investigated. As a result of applying a low axial magnetic field of approximately 20 G, a significant increase in SF3+ ion flux extracted from the source was observed among the various reactive ions generated using SF6 gas, and the etch rates of Si and SiO2 using a neutral beam formed by the magnetically enhanced SF6 ICP source were also increased. The application of the low axial magnetic field also improved the etch uniformity of the neutral beam etching system.
- 2005-02-01
著者
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Lee Dohaing
Department Of Materials Engineering Sungkyunkwan University
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Park Byungjae
Department Of Materials Engineering Sungkyunkwan University
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Yeom Geunyoung
Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, South Korea
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Lee Dohaing
Department of Materials Engineering, Sungkyunkwan University, Jangan-Gu Chunchun-Dong 300, Suwon 440-746, South Korea
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