0.12μm Gate Length T-Shaped AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Fabricated Using a Plasma-Enhanced Chemical Vapor Deposited Silicon-Nitride-Assisted Process
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-12-15
著者
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Lim J‐w
Microwave Devices Team Etri
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Mun Jae-kyoung
Rf Circuit Group It Convergence And Components Laboratory Electronics And Telecommunications Researc
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LIM Jong-Won
High Speed IC Research Department, Basic Research Laboratory, Electronics and Telecommunications Res
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AHN Ho-Kyun
High Speed IC Research Department, Basic Research Laboratory, Electronics and Telecommunications Res
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JI Hong-Gu
High Speed IC Research Department, Basic Research Laboratory, Electronics and Telecommunications Res
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CHANG Woo-Jin
High Speed IC Research Department, Basic Research Laboratory, Electronics and Telecommunications Res
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MUN Jae-Kyoung
High Speed IC Research Department, Basic Research Laboratory, Electronics and Telecommunications Res
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KIM Haecheon
High Speed IC Research Department, Basic Research Laboratory, Electronics and Telecommunications Res
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Ahn Ho-kyun
Microwave Devices Team Etri
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Chang Woo-jin
Microwave Devices Team Etri
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Kim Haecheon
Microwave Devices Team Etri
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Mun Jong-kuk
Rf Circuit Group It Convergence And Components Laboratory Electronics And Telecommunications Researc
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- 0.12 μm Gate Length T-Shaped AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Fabricated Using a Plasma-Enhanced Chemical Vapor Deposited Silicon–Nitride-Assisted Process
- Comparative Study of DC and Microwave Characteristics of 0.12 μm Double-Recessed Gate AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Using Dielectric-Assisted Process