Ahn Ho-kyun | Microwave Devices Team Etri
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概要
関連著者
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Lim J‐w
Microwave Devices Team Etri
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Ahn Ho-kyun
Microwave Devices Team Etri
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Chang Woo-jin
Microwave Devices Team Etri
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Kim Haecheon
Microwave Devices Team Etri
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Mun Jae-kyoung
Rf Circuit Group It Convergence And Components Laboratory Electronics And Telecommunications Researc
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JI Hong-Gu
Microwave Devices Team, ETRI
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Ji Hong-gu
Microwave Devices Team Etri
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Mun Jong-kuk
Rf Circuit Group It Convergence And Components Laboratory Electronics And Telecommunications Researc
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LIM Jong-Won
High Speed IC Research Department, Basic Research Laboratory, Electronics and Telecommunications Res
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AHN Ho-Kyun
High Speed IC Research Department, Basic Research Laboratory, Electronics and Telecommunications Res
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JI Hong-Gu
High Speed IC Research Department, Basic Research Laboratory, Electronics and Telecommunications Res
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CHANG Woo-Jin
High Speed IC Research Department, Basic Research Laboratory, Electronics and Telecommunications Res
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MUN Jae-Kyoung
High Speed IC Research Department, Basic Research Laboratory, Electronics and Telecommunications Res
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KIM Haecheon
High Speed IC Research Department, Basic Research Laboratory, Electronics and Telecommunications Res
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LIM Jong-Won
IT Components & Materials Technology Research Division, IT Convergence & Components Laboratory, Elec
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YOON Seok-Won
IT Components & Materials Technology Research Division, IT Convergence & Components Laboratory, Elec
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AHN Ho-Kyun
IT Components & Materials Technology Research Division, IT Convergence & Components Laboratory, Elec
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JI Hong-Gu
IT Components & Materials Technology Research Division, IT Convergence & Components Laboratory, Elec
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CHANG Woo-Jin
IT Components & Materials Technology Research Division, IT Convergence & Components Laboratory, Elec
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MUN Jae-Kyoung
IT Components & Materials Technology Research Division, IT Convergence & Components Laboratory, Elec
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KIM Haecheon
IT Components & Materials Technology Research Division, IT Convergence & Components Laboratory, Elec
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AHN Hokyun
RF Circuit Group, IT Convergence and Components Laboratory, Electronics and Telecommunications Resea
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LIM Jong-Won
RF Circuit Group, IT Convergence and Components Laboratory, Electronics and Telecommunications Resea
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JI Hong-Gu
RF Circuit Group, IT Convergence and Components Laboratory, Electronics and Telecommunications Resea
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CHANG Woo-Jin
RF Circuit Group, IT Convergence and Components Laboratory, Electronics and Telecommunications Resea
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KIM Haecheon
RF Circuit Group, IT Convergence and Components Laboratory, Electronics and Telecommunications Resea
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CHANG Woo
Microwave Devices Team, ETRI
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LIM Jong-Won
Microwave Devices Team, ETRI
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AHN Ho-Kyun
Microwave Devices Team, ETRI
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KIM Haechoen
Microwave Devices Team, ETRI
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OH Seung-Hyub
Electronics Engineering Department, Chungnam National Univ.
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Chang Woo
Microwave Devices Team Etri
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Yoon Seok-won
It Components & Materials Technology Research Division It Convergence & Components Laborator
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Oh Seung-hyub
Electronics Engineering Department Chungnam National Univ.
著作論文
- Comparative Study of DC and Microwave Characteristics of 0.12μm T-Shaped Gate AlGaAs/InGaAs/GaAs PHEMTs Using a Hybrid and Conventional E-beam Lithography Process
- Influence of T-gate shape on the device characteristics in SiN-assisted 0.12um AlGaAs/InGaAs PHEMT
- A Comparative Study on the DC, Microwave Characteristics of 0.12μm Double-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a Dielectric Assisted Process
- 0.12μm Gate Length T-Shaped AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Fabricated Using a Plasma-Enhanced Chemical Vapor Deposited Silicon-Nitride-Assisted Process
- Broadband 60GHz Power Amplifier MMIC with Excellent Gain-Flatness
- Comparative Study of DC and Microwave Characteristics of 0.12μm Double-Recessed Gate AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Using Dielectric-Assisted Process (Special Issue: Solid State Devices & Materials)