Influence of T-gate shape on the device characteristics in SiN-assisted 0.12um AlGaAs/InGaAs PHEMT
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Lim J‐w
Microwave Devices Team Etri
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Mun Jae-kyoung
Rf Circuit Group It Convergence And Components Laboratory Electronics And Telecommunications Researc
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AHN Hokyun
RF Circuit Group, IT Convergence and Components Laboratory, Electronics and Telecommunications Resea
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LIM Jong-Won
RF Circuit Group, IT Convergence and Components Laboratory, Electronics and Telecommunications Resea
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JI Hong-Gu
RF Circuit Group, IT Convergence and Components Laboratory, Electronics and Telecommunications Resea
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CHANG Woo-Jin
RF Circuit Group, IT Convergence and Components Laboratory, Electronics and Telecommunications Resea
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KIM Haecheon
RF Circuit Group, IT Convergence and Components Laboratory, Electronics and Telecommunications Resea
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JI Hong-Gu
Microwave Devices Team, ETRI
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Ahn Ho-kyun
Microwave Devices Team Etri
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Ji Hong-gu
Microwave Devices Team Etri
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Chang Woo-jin
Microwave Devices Team Etri
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Kim Haecheon
Microwave Devices Team Etri
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Mun Jong-kuk
Rf Circuit Group It Convergence And Components Laboratory Electronics And Telecommunications Researc
関連論文
- Comparative Study of DC and Microwave Characteristics of 0.12μm T-Shaped Gate AlGaAs/InGaAs/GaAs PHEMTs Using a Hybrid and Conventional E-beam Lithography Process
- Influence of T-gate shape on the device characteristics in SiN-assisted 0.12um AlGaAs/InGaAs PHEMT
- A Comparative Study on the DC, Microwave Characteristics of 0.12μm Double-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a Dielectric Assisted Process
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