PdGe-Based Ohmic Contact on n-GaAs with Highly and Poorly Doped Layers
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-05-15
著者
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An S‐j
Pahang Univ. Sci. And Technol. (postech) Pohang Kor
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Lim J‐w
Microwave Devices Team Etri
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Kwak Min-hwan
Basic Research Laboratory Electronics And Telecommunications Research Institute
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Mun Jae-kyoung
Rf Circuit Group It Convergence And Components Laboratory Electronics And Telecommunications Researc
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LIM Jong-Won
Compound Semiconductor Reseaarch Dept. , Micro-Electronics Technology Lab. , Electronics and Telecom
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MUN Jae-Kyoung
Compound Semiconductor Reseaarch Dept. , Micro-Electronics Technology Lab. , Electronics and Telecom
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AN Sung-Jong
Compound Semiconductor Reseaarch Dept. , Micro-Electronics Technology Lab. , Electronics and Telecom
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NAM Sungun
Compound Semiconductor Reseaarch Dept. , Micro-Electronics Technology Lab. , Electronics and Telecom
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KWAK Myeong-Hyeon
Compound Semiconductor Reseaarch Dept. , Micro-Electronics Technology Lab. , Electronics and Telecom
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KIM Haecheon
Compound Semiconductor Reseaarch Dept. , Micro-Electronics Technology Lab. , Electronics and Telecom
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LEE Jae-Jin
Compound Semiconductor Reseaarch Dept. , Micro-Electronics Technology Lab. , Electronics and Telecom
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Nam Sungun
Compound Semiconductor Reseaarch Dept. Micro-electronics Technology Lab. Electronics And Telecommuni
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Kwak M‐h
Electronics And Telecommunications Res. Inst. Daejeon Kor
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Kim Haecheon
Microwave Devices Team Etri
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Lee Jae-jin
Compound Semiconductor Reseaarch Dept. Micro-electronics Technology Lab. Electronics And Telecommuni
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Mun Jong-kuk
Rf Circuit Group It Convergence And Components Laboratory Electronics And Telecommunications Researc
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