AHN Ho-Kyun | High Speed IC Research Department, Basic Research Laboratory, Electronics and Telecommunications Res
スポンサーリンク
概要
- 同名の論文著者
- High Speed IC Research Department, Basic Research Laboratory, Electronics and Telecommunications Resの論文著者
関連著者
-
LIM Jong-Won
High Speed IC Research Department, Basic Research Laboratory, Electronics and Telecommunications Res
-
AHN Ho-Kyun
High Speed IC Research Department, Basic Research Laboratory, Electronics and Telecommunications Res
-
JI Hong-Gu
High Speed IC Research Department, Basic Research Laboratory, Electronics and Telecommunications Res
-
CHANG Woo-Jin
High Speed IC Research Department, Basic Research Laboratory, Electronics and Telecommunications Res
-
MUN Jae-Kyoung
High Speed IC Research Department, Basic Research Laboratory, Electronics and Telecommunications Res
-
KIM Haecheon
High Speed IC Research Department, Basic Research Laboratory, Electronics and Telecommunications Res
-
Lim J‐w
Microwave Devices Team Etri
-
Mun Jae-kyoung
Rf Circuit Group It Convergence And Components Laboratory Electronics And Telecommunications Researc
-
Ahn Ho-kyun
Microwave Devices Team Etri
-
Chang Woo-jin
Microwave Devices Team Etri
-
Kim Haecheon
Microwave Devices Team Etri
-
Mun Jong-kuk
Rf Circuit Group It Convergence And Components Laboratory Electronics And Telecommunications Researc
-
JI Hong-Gu
Microwave Devices Team, ETRI
-
Ji Hong-gu
Microwave Devices Team Etri
-
Lim Jong-Won
High Speed IC Research Department, Basic Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea
-
Lim Jong-Won
High Speed SoC Research Department, Basic Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-350, Korea
-
Chang Woo-Jin
High Speed IC Research Department, Basic Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea
-
Ahn Ho-Kyun
High Speed IC Research Department, Basic Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea
-
Chang Woo-Jin
High Speed SoC Research Department, Basic Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-350, Korea
-
Ji Hong-Gu
High Speed IC Research Department, Basic Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea
-
Ji Hong-Gu
High Speed SoC Research Department, Basic Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-350, Korea
-
Mun Jae-Kyoung
High Speed IC Research Department, Basic Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea
-
Ahn Ho-Kyun
High Speed SoC Research Department, Basic Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-350, Korea
-
Kim Haecheon
High Speed IC Research Department, Basic Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea
-
Kim Haecheon
High Speed SoC Research Department, Basic Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-350, Korea
-
Mun Jae-Kyoung
High Speed SoC Research Department, Basic Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-350, Korea
著作論文
- A Comparative Study on the DC, Microwave Characteristics of 0.12μm Double-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a Dielectric Assisted Process
- 0.12μm Gate Length T-Shaped AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Fabricated Using a Plasma-Enhanced Chemical Vapor Deposited Silicon-Nitride-Assisted Process
- 0.12 μm Gate Length T-Shaped AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Fabricated Using a Plasma-Enhanced Chemical Vapor Deposited Silicon–Nitride-Assisted Process
- Comparative Study of DC and Microwave Characteristics of 0.12 μm Double-Recessed Gate AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Using Dielectric-Assisted Process