Comparative Study of DC and Microwave Characteristics of 0.12 μm Double-Recessed Gate AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Using Dielectric-Assisted Process

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We report the fabrication and DC and microwave characteristics of 0.12 μm double-recessed T-gate AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistors (PHEMTs) using dielectric-assisted process. Silicon nitride layers 300 and 200 Å thick were deposited by plasma-enhanced chemical vapor deposition (PECVD) at 260 °C to protect the device and to define the gate footprint. The double-recess process was carried out by two different etching techniques to obtain double-recessed T-gates with 0.12 μm gate lengths. Completed double-recessed T-gate AlGaAs/InGaAs/GaAs pHEMT devices fabricated using dry etching exhibited a peak transconductance, $g_{\text{m}}$, of 765 mS/mm, a current-gain cutoff frequency ($ f_{\text{T}}$) as high as 124 GHz, and a maximum oscillation frequency ($ f_{\text{max}}$) of 247 GHz. The fabricated low-noise amplifier (LNA) has a measured gain of more than 20 dB in the 62.75 to 64.75 GHz frequency range.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2006-04-30