Effective Channel Length Shortening and Mobility Increase of p-Channel Metal Oxide Semiconductor Transistors Resulting in Higher Drive Current Using Short Source-Drain Diffusion Length
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-03-15
著者
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Lau Wai-shing
School Of Electrical And Electronic Engineering Nanyang Technological University
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Tee Kian-meng
Department Of Technology Development Chartered Semiconductor Manufacturing Ltd.
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Chan Lap-hung
Department Of Technology Development Chartered Semiconductor Manufacturing Ltd.
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Quek Elgin
Department Of Technology Development Chartered Semiconductor Manufacturing Ltd.
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SEE Kwang-Seng
School of Electrical and Electronic Engineering, Nanyang Technological University
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LIAO Hong
Department of Technology Development, Chartered Semiconductor Manufacturing Ltd
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TEE Kheng-Chok
Department of Technology Development, Chartered Semiconductor Manufacturing Ltd
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ENG Chee-Wee
School of Electrical and Electronic Engineering, Nanyang Technological University
関連論文
- Reduced Hot-Carrier Induced Degradation of NMOS I/O Transistors with Sub-micron Source-Drain Diffusion Length for 0.11μm Dual Gate Oxide CMOS Technology
- Reduced Hot-Carrier Induced Degradation of NMOS I/O Transistors with Sub-micron Source-Drain Diffusion Length for 0.11μm Dual Gate Oxide CMOS Technology
- Improving the Accuracy of Modified Shift-and-Ratio Channel Length Extraction Method Using Scanning Capacitance Microscopy
- Effective Channel Length Shortening and Mobility Increase of p-Channel Metal Oxide Semiconductor Transistors Resulting in Higher Drive Current Using Short Source-Drain Diffusion Length
- Improving the Accuracy of Modified Shift-and-Ratio Channel Length Extraction Method Using Scanning Capacitance Microscopy
- An Improved Shift-and-Ratio Effective Channel Length Extraction Method for Metal Oxide Silicon Transistors with Halo/Pocket Implants
- Effective Channel Length Shortening and Mobility Increase of p-Channel Metal Oxide Semiconductor Transistors Resulting in Higher Drive Current Using Short Source–Drain Diffusion Length
- Enhanced Hot-Hole Induced Degradation of Strained p-Channel Metal Oxide Semiconductor Transistors in Complementary Metal Oxide Semiconductor Technology with 2.0 nm Gate Oxide