An Improved Shift-and-Ratio Effective Channel Length Extraction Method for Metal Oxide Silicon Transistors with Halo/Pocket Implants
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概要
- 論文の詳細を見る
The original shift-and-ratio method tends to significantly over-estimate the effective channel length $L_{\text{eff}}$ of metal–oxide–silicon (MOS) transistors with halo/pocket implants because the carrier mobility of the short transistor tends to be smaller than that of the long transistor. A modification of the original method has been tested on both n-channel metal–oxide–silicon (NMOS) and p-channel metal–oxide–silicon (PMOS) transistors fabricated by state-of-the-art complementary metal–oxide–silicon (CMOS) technology. The values of $L_{\text{eff}}$ generated by this method are more reasonable than the original shift-and-ratio method with much less computation time involved. The theoretical basis of our method is that the carrier mobility of the short transistor is approximately equal to that of the long transistor when the gate voltage is close to the threshold voltage for state-of-the-art MOS transistors with ${<}2$ nm gate oxide.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-05-15
著者
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Lau Wai-shing
School Of Electrical And Electronic Engineering Nanyang Technological University
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Lee James
Department Of Forensic Science Central Police University
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Vigar David
Department Of Technology Development Chartered Semiconductor Manufacturing Ltd
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Eng Chee-wee
School Of Electrical And Electronic Engineering Nanyang Technological University
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Lau Wai-Shing
School of Electrical and Electronic Engineering, Nanyang Technological University, Block S2, Nanyang Avenue, Singapore 639798, Republic of Singapore
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Lee James
Department of Technology Development, Chartered Semiconductor Manufacturing Ltd 60 Woodlands Industrial Park D St. 2, Singapore 738406, Republic of Singapore
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Eng Chee-Wee
School of Electrical and Electronic Engineering, Nanyang Technological University, Block S2, Nanyang Avenue, Singapore 639798, Republic of Singapore
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Vigar David
Department of Technology Development, Chartered Semiconductor Manufacturing Ltd 60 Woodlands Industrial Park D St. 2, Singapore 738406, Republic of Singapore
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- An Improved Shift-and-Ratio Effective Channel Length Extraction Method for Metal Oxide Silicon Transistors with Halo/Pocket Implants
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