Effect of Potassium Ion on Anisotropy of TMAH (特集:立体的微細加工)

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概要

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• We have clarified the effect of potassium ion addition to TMAH solution on orientation dependence of etching rate in silicon anisotropic etching and etched surface roughness. Hemispherical specimen of single crystal silicon and wagon wheel pattern were used for experiments. The etching rate in <011> direction decreases dramatically, etching rate in <111> direction increases and surface roughness decreased with adding potassium ion in TMAH.

• 社団法人 電気学会の論文
• 2000-07-01

著者

• TABATA Osamu

  Ritsumeikan University

• SATO Kazuo

  Nagoya University

• Yoshioka Tetsuo

  Nagoya University

• YASHIMA Manabu

  Ritsumeikan University

• Sato Kazuo

  Nagoya Univ. Nagoya Jpn

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