Selectivity Control of Mask Material for XeF_2 Etching Using UV light Exposure

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概要

• 論文の詳細を見る

• A new technique to control selectivity of mask materials during XeF2 etching was proposed. By exposing Si sample with SiO2 and Si3N4 as mask materials to UV light of 981mW/cm2 during XeF2 etching, the etching rate ratios of Si/SiO2 and Si/Si3N4 were dramatically decreased from 11446 to 906.1 and from 488.2 to 29.3, respectively. This new technique allows us to remove the mask material selectively and change the mask pattern by UV light exposure during in-situ etching process without additional photolithography step and opens a new silicon micromachining process for 3-dimensional fabrication. The multi-step Si structure was successfully realized by this technique.

• 社団法人 電気学会の論文
• 2001-12-01

著者

• Sugano Koji

  Ritsumeiken University

• TABATA Osamu

  Ritsumeikan University

• Tabata Osamu

  Ritsumeiken University

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