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Ulsi Process Technology Development Center Matsushita Electronics Corporation | 論文
- Initial Stage of Oxidation of Si(001)-2 × Surface Studied by X-Ray Photoelectron Spectroscopy
- Initial Stage of Oxidation of Si(001)-2x1 Surface Studied by X-Ray Photoelectron Spectroscopy
- Impact of Structural Strained Layer near SiO_2/Si Interface on Activation Energy of Time-Dependent Dielectric Breakdown
- Heteroepitaxial Growth of CuGaS_2 Layers by Low-Pressure Metalorganic Chemical Vapor Deposition
- 2.51 eV Donor-Acceptor Pair Photoluminescence from Zn-Doped CuAlSe_2 Epilayer Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- Low-Pressure Metalorganic Chemical Vapor Deposition of CuAlSe_2 Epitaxial Films
- In-Situ Observation of Oxygen Exposed Hydrogen Terminated Silicon Surfaces
- Low-Pressure Metalorganic Chemical Vapor Deposition of a CuGaSe_2/CuAlSe_2 Heterostructure
- Consideration of Silylation Contrast in an ArF Liquid-Phase Silylation Process
- He I Photoelectron Spectra of Permethylated Polygermanes
- Quantification of Electrical Deactivation by Triply Negative Charged Ga Vacancies in Highly Doped Thin GaAs Layers
- Excellent Thermally Stable Epitaxial Channel for Implanted Planar-Type Heterojunction Field-Effect Transistors
- Excellent Thermally-Stable Epitaxial Channel for Implanted Planar-Type Hetero-Junction Field-Effect Transistors
- Relationship between Low-Noise Performance and Electron Confinement in the Channel of Two-Mode Channel Field-Effect Transistors in a Low-Drain-Current Condition
- New Plamar Two-Mode Channel Field-Effect Transistor Suitable for L-Band Microwave Monolithic Integrated Circuits with RF Transmission and Reception Blocks Operating at V_≤2 V
- A Superlow-Noise AlGaAs/InGaAs/GaAs Doped Channel Heterojunction Field-Effect Transistor (DC-HFET) with 0.15-μm Gate Length
- A New High Electron Mobility Transistor (HEMT) Structure with a Narrow Quantum Well Formed by Inserting a Few Monolayers in the Channel
- Sample Preparation and Photoluminescence of ZnO Particles Embedded in Thin Alkali Halide Crystals
- Crown-Ether Cyanide Treatment to Eliminate Interface States at Si/SiO_2 Interfaces
- Contact Hole Etch Scaling toward 0.1 μm