スポンサーリンク
ULSI Process Technology Development Center, Matsushita Electronics Corporation | 論文
- Voltage Shift Effect on Retention Failure in Ferroelectric Memories
- Retention Characteristics of a Ferroelectric Memory Based on SrBi_2(Ta, Nb)_2O_9
- Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WN_x Gate Formation
- Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WNx Gate Formation
- Consideration of Silylation Contrast in an ArF Liquid-Phase Silylation Process
- A Simulation Methodology for Bidirectional Hot-Carrier Degradation in a Static RAM Circuit
- Characterization of the Depth Profile of Electrically Activated Ion-Implanted Impurities by X-ray Photoelectron Spectroscopy and Anodic Oxidation
- An Experimental Evidence to Link the Origins of "A Mode" and "B Mode" Stress Induced Leakage Current
- High Performance Etching Process for Organic Films using SO2/O2 Plasma