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Tsukuba Research And Development Center Texas Instruments Japan Limited | 論文
- X-Ray Standing Wave Analysis of GaAs/Si Interface
- X-Ray Standing Wave Analysis of Al/GaAs/Si(111)
- Double-Pass Amplification in Ge Soft X-Ray Laser with a Polarizing Half-Cavity
- Generation of Misfit Dislocations in Si_Ge_x/Si Heterostructures
- Dislocation Reduction in MBE-Grown Ge on Si (001) by in situ Thermal Annealing : Condensed Matter
- Misfit Dislocation Structures at MBE-Grown Si_Ge_x/Si Interfaces : Surfaces, Interfaces and Films
- Control of Crystalline Structure and Electrical Properties of TaSiN Thin Film Formed by Reactive RF-Sputtering
- Observation of ultrafast spin-lattice relaxation in Tm2+-doped CaF2 and SrF2 crystals by optical means
- Normal Incidence Multilayer Mirrors for Soft X-Rays (光学薄膜特集号)
- Optical Design for Soft X-Ray Projection Lithography : X-Ray Lithography
- Optical Design for Soft X-Ray Projection Lithography
- Temperature Dependence of TaSiN Thin Film Resistivity from Room Temperature to 900℃ : Semiconductors
- Control of Grain Structure of Sputtering Lead-Zirconate-Titanate Thin Film Using Amorphous Lead-Titanate Buffer Layer
- Characterization of Sputtered Lead-Zirconate-Titanate Thin Films with Various Compositions
- Recovery of the Ferroelectric Properties of Hydrogen-Damaged Ir/Pb(Zr,Ti)O3/Ir Capacitors by Post Annealing
- Characterization of Switching Properties of Lead-Zirconate-Titanate Thin Films in Ti-Rich Phase
- Critical Thickness for the Si_Ge_x/Si Heterostructure
- Nonadherence to the conventional group velocity for nanosecond light pulses in Rb vapor
- 28aGAB-3 相対論的強度のレーザープラズマ相互作用による高次高調波の観測(28aGAB ビーム物理領域,領域2合同レーザー加速,領域2(プラズマ基礎・プラズマ科学・核融合プラズマ・プラズマ宇宙物理))
- Propagation of femtosecond light pulses in a dye solution : Nonadherence to the conventional group velocity