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Tokai Univ. Hiratsuka Jpn | 論文
- SiO_2 Etching Employing Inductively Coupled Plasma with Hot Inner Wall
- CZ Siウェｰハ表面の弾塑性変形抵抗におよぼす高温熱処理の影響
- High Temperature X-Ray Diffraction Study of Melt Structure of Silicon
- Effect of Growth Interruption during GaAs/AlGaAs Molecular Beam Epitaxy on (411)A Substrates
- Flattening Transition 0n GaAs (411)A Surfaces Observed by Scanning Tunneling Microseopy
- 核融合炉用ダイバｰタ材料としての2ホウ化チタンセラミックスの高温熱的特性
- Carbon δ-Doping in GaAs by Metal-Organic Molecular Beam Epitaxy
- Structural Aspects of Heavily Carbon-Doped GaAs Grown by Metalorganic Molecular Beam Epitaxy (MOMBE)
- GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base
- P-Type Carbon-Doped InGaAs Grown by Metalorganic Molecular Beam Epitaxy
- Heavily Carbon-Doped P-Type InGaAs Grown by Metalorganic Molecular Beam Epitaxy
- Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes
- Supersonic rapid aging for quasicrystal reinforced Al light alloy
- Fabrication of Fine-Grained Positive Temperature Coefficient Ceramics from Chemically Prepared Powder : Ferroelectrics
- Effect of Heavy Doping on Band Gap and Minority Carrier Transport of AlGaAs/GaAs HBT's (SOLID STATE DEVICES AND MATERIALS 1)
- Homoepitaxial Chemical Vapor Deposition of 6H-SiC at Low Temperatures on {011^^-4} Substrates
- Photoluminescence of Ti Doped 6H-SiC Grown by Vapor Phase Epitaxy
- InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode
- High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
- InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices