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Texas Instruments Tsukuba Research and Development Center Limited | 論文
- Si Molecular Beam Epitaxial Growth over an Atomic-Layer Boron Adsorbed Si(001) Substrate and Its Electrical Properties
- Control of Crystalline Structure and Electrical Properties of TaSiN Thin Film Formed by Reactive RF-Sputtering
- Surface Preparation, Growth, and Interface Control of Ultrathin Gate Oxides
- Simultaneous Observation of SiO_2 Surface and SiO_2/Si Interface Using Self-Assembled-Monolayer Island
- Aggregation of Monocrystalline β-FeSi_2 by Annealing and by Si Overlayer Growth
- Comparison of Planar to Columnar Transformation of PtSi Layers on Si(001) and Si(111) Substrates in the Si Capping Layer Growth Process
- Control of Grain Structure of Laser-Deposited (Ba, Sr)TiO_3 Films to Reduce Leakage Current ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Comparative Study of Amorphous and Crystalline (Ba,Sr)TiO_3 Thin Films Deposited by Laser Ablation
- Layer-by-Layer Etching of Si(111) Surface by Oxygen at Elevated Temperature
- High Temperature STM Observation of Layer-by-Layer Etching of Si(111) with O_2 Flux
- Comparison of Measurement Techniques for Gate Shortening in Sob-Micrometer Metal Oxide Semiconductor Field Effect Transistors
- Hybrid Method of Data Collection for Evaluating Speech Dialogue System
- Theoretical Estimation of the Energy Differences among OH-, F-, and H-terminations of the Si Surface