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Texas Instruments Japan Ltd. Ibaraki Jpn | 論文
- Control of Crystalline Structure and Electrical Properties of TaSiN Thin Film Formed by Reactive RF-Sputtering
- Oxygen Plasma Damage in GaAs Directly Exposed to Surface-Wave Plasma
- Evaluation of Oxygen-Plasma Damage in GaAs Exposed to a Surface-Wave Plasma Source Developed for the Ashing Process : Nuclear Science, Plasmas, and Electric Discharges
- Sharp Optical Emission from CuInSe_2 Thin Films Grown by Molecular Beam Epitaxy
- Molecular Beam Epitaxial Growth and Properties of CuInSe_2
- Temperature Dependence of TaSiN Thin Film Resistivity from Room Temperature to 900℃ : Semiconductors
- Control of Grain Structure of Sputtering Lead-Zirconate-Titanate Thin Film Using Amorphous Lead-Titanate Buffer Layer
- Characterization of Sputtered Lead-Zirconate-Titanate Thin Films with Various Compositions
- Recovery of the Ferroelectric Properties of Hydrogen-Damaged Ir/Pb(Zr,Ti)O3/Ir Capacitors by Post Annealing
- Characterization of Switching Properties of Lead-Zirconate-Titanate Thin Films in Ti-Rich Phase
- Composition and Growth Mechanisms of a Boron Layer Formed Using the Molecular Layer Doping Process