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Sumitomo Chemical | 論文
- Structural and Electronic Properties of Liquid Arsenic Sulfide at High Temperatures : Ab Initio Molecular-Dynamics Simulations(Condensed Matter : Structure, Mechanical and Thermal Properties)
- Ab initio Molecular-Dynamics Simulations of Anomalous Structural Change in Liquid Tellurium under Pressure
- Ab initio Molecular-Dynamics Simulations of Anomalous Structural Change in Liquid Tellurium under Pressure
- Bonding Properties of Liquid Tellurium under Pressure : A Maximally Localized Wannier Function Approach with Ultrasoft Pseudopotentials (Condensed Matter: Structure, Mechanical and Thermal Properties)
- Bonding Properties of Liquid Tellurium under Pressure : A Maximally Localized Wannier Function Approach with Ultrasoft Pseudopotentials
- The Microscopic Mechanism of the Metal-Semiconductor Transition in Liquid Alkali-Te Mixtures : Ab initio Molecular-Dynamics Simulations
- Effects of Semicore Electrons on the Structure of Liquid Rubidium : an ab initio Molecular-Dynamics Simulation
- Thin Body III-V-Semiconductor-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding
- High Electron Mobility Metal-Insulator-Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels
- The effect of n-GaAs carrier concentration on current gain in InGaP/GaAs heterojunction bipolar transistors
- Influence of 5/3 Ratio of Carbon-Doped p-GaAs on Current Gain and Its Thermal Stability in InGaP/GaAs HeterdunctionBipolmTransistors
- The Solution of the Aharonov-Bohm Equation
- Ultrathin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors with InP Passivation Layers on Si Substrates Fabricated by Direct Wafer Bonding
- Monitoring and Scale-Up of Static Electrification during Solid-Liquid Mixing
- ？？/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
- Investigation of InAlAs Oxide/InP Metal–Oxide–Semiconductor Structures Formed by Wet Thermal Oxidation
- Electron Mobility Enhancement of Extremely Thin Body In_Ga_As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers
- Self-Aligned Metal Source/Drain InxGa1-xAs n-Metal--Oxide--Semiconductor Field-Effect Transistors Using Ni--InGaAs Alloy
- III-V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding
- Controlling Anion Composition at Metal--Insulator--Semiconductor Interfaces on III--V Channels by Plasma Processing