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State Key Laboratory Of Functional Materials For Informatics And Nanotechnology Laboratory Shanghai | 論文
- Si_2Sb_2Te_6 Phase Change Material for Low-Power Phase Change Memory Application
- Germanium Nitride Interfacial Layer for Chalcogenide Random Access Memory Applications
- High Speed Chalcogenide Random Access Memory Based on Si_2Sb_2Te_5
- Investigation of Compositional Gradient Phase Change Si_xSb_2Te_3 Thin Films
- Multilevel Data Storage Characteristics of Phase Change Memory Cell with Doublelayer Chalcogenide Films (Ge_2Sb_2Te_5 and Sb_2Te_3)
- Reversible Resistance Switching of GeTi Thin Film Used for Non-Volatile Memory
- Comparison of the Treatment Performances of High-strength Wastewater in Vertical Subsurface Flow Constructed Wetlands Planted with Acorus calamus and Lythrum salicaria
- Mechanism of Oxidation on Si2Sb2Te5 Phase Change Material and Its Application
- Study on Interface Adhesion between Phase Change Material Film and SiO2 Layer by Nanoscratch Test
- Phase Change Memory Based on (Sb2Te3)0.85--(HfO2)0.15 Composite Film
- Three-Dimensional Numerical Simulation of Phase-Change Memory Cell with Probe like Bottom Electrode Structure
- Phase Change Memory Cell Using Si2Sb2Te3 Material
- A Study on Microstructure and Electrical Properties of Pb_La_Ca_Ti_O_3 Thin Films Prepared by Metal-Organic Decomposition
- Crystallization Process of Amorphous GaSb_5Te_4 Film for High-Speed Phase Change Memory
- Optimization of Anomalous Cells with High SET Resistance in Phase Change Memory Arrays
- Study on Adhesive Strength between Ge2Sb2Te5 Film and Electrodes for Phase Change Memory Application