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Semiconductor Technology Academic Research Center | 論文
- Analysis of Operation Margin and Read Speed in 6T- and 8T-SRAM with Local Electron Injected Asymmetric Pass Gate Transistor
- The Observation of "Conduction Spot" on NiO Resistance Random Access Memory
- Floating Gate Memory Based on Ferritin Nanodots with High-$k$ Gate Dielectrics
- Surface-Potential-Based Metal–Oxide–Silicon-Varactor Model for RF Applications
- Frequency Dependence of Measured Metal Oxide Semiconductor Field-Effect Transistor Distortion Characteristic
- Estimation of Delay Test Quality and Its Application to Test Generation
- Experimental Demonstration of Post-Fabrication Self-Improvement of SRAM Cell Stability by High-Voltage Stress
- NBTI Reliability of PFETs under Post-Fabrication Self-Improvement Scheme for SRAM
- Estimation of Delay Test Quality and Its Application to Test Generation