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Semiconductor Physics Research Center And Department Of Semiconductor Science And Technology Chonbuk | 論文
- 1.3μm Vertical-Cavity Surface-Emitting Lasers Using Heavy Ion Implantation and Dielectric Mirror : Optics and Quantum Electronics
- Photoenhanced Electrochemical Etching of n-GaN Forced by Negative Bias : Semiconductors
- Fabrication of Tunable Sampled Grating DBR Laser Integrated Monolithically with Optical Semiconductor Amplifier Using Planar Buried Heterostructure
- 1.1mW Single-Mode Output Power of All-Monolithic 1.3μm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition
- Effects of Initial Thermal Cleaning Treatment of a Sapphire Substrate Surface on the GaN Epilayer
- Delta-Doping of Si in GaN by Metalorganic Chemical Vapor Deposition
- Selective Oxidation of AlGaAs/GaAs Structure and Its Application to Vertical Cavity Lasers
- Selective Oxidation of AlGaAs/GaAs Structure and Its Application to Vertical Cavity Lasers
- Formation Mechanism and Pore Size Control of Light-Emitting Porous Silicorn
- Semi-Insulating Substrate Effects on Pure GaAs Epilayers
- Redshift and Blueshift Due to Interaction between C-H Bond of Methyl Radicals and Highly Electronegative Oxygen
- Growth of Four-fold Grained K_3Li_2Nb_5O_ Thin Film Using RF-Magnetron Sputtering
- (012) Preferred Orientation of LiNbO_3 Thin Films by RF-Magnetron Sputtering
- Elimination of Al Line and Via Resistance Degradation under HTS Test in Application of F-Doped Oxide as Intermetal Dielectric
- Inhomogeneous Barrier Height Analysis of (Ni/Au)--InAlGaN/GaN Schottky Barrier Diode
- Hole and Interface Traps in Mg-doped Al_Ga_N/GaN Grown by Metalorganic Chemical Vapor Deposition(Electrical Properties of Condensed Matter)
- Structural and Optical Properties of In-Rich InAlGaN/InGaN Heterostructures for White Light Emission
- Strain-Induced Compositional Fluctuation and V-Defect Formation in Green-InGaN/GaN Multi-Quantum Wells Grown on Sapphire and Freestanding GaN Substrates
- Beam Divergence and Thermal Transient Characteristics of InGaN/GaN Light Emitting Diodes with Rear Side Grown ZnO Nanorods
- Elimination of Al Line and Via Resistance Degradation under HTS Test in Application of F-Doped Oxide as Intermetal Dielectric