スポンサーリンク
Semiconductor Leading Edge Technologies, Inc. | 論文
- Isochoric Heat Capacities of Ethanol-water Mixtures at Temperatures from 280K to 420K and Pressures up to 30MPa (特集 ACRA-2002講演論文選集(1))
- Specific Isochoric Heat Capacity Measurements for Liquid Isobutane (特集 ACRA-2002講演論文選集(1))
- Evaluation of High-Transmittance Attenuated Phase Shifting Mask for 157 nm Lithography
- N,N,N',N'-Tetraalkyl-2,2'-dihydroxy-1,1'-binaphthyl-3,3'-dicarboxamides : Novel Chiral Auxiliaries for Asymmetric Simmons-Smith Cyclopropanation of Allylic Alcohols and for Asymmetric Diethylzinc Addition to Aldehydes
- Enantioselective Addition of Diethylzinc to Aldehydes Using 1, 1′-Bi-2-naphthol-3, 3′-dicarboxamide as a Chiral Auxiliary
- Asymmetric Simmons-Smith Cyclopropanation of E-Allylic Alcohols Using 1,1'-Bi-2-naphthol-3,3'-dicarboxamide as a Chiral Auxiliary
- Regression Analysis in the Characterization of Hydrogen-bonded Complex System Involving 2-Pyridone in Terms of Melting Points before and after Complexation
- Suppression of Gate-Edge Metamorphoses of Metal/High-k Gate Stack by Low-Temperature, Cl-Free SiN Offset Spacer and its Impact on Scaled MOSFETs
- 65nm-node Low-Standby-Power FETs with HfAlOx Gate Dielectric
- Improvement of Adhesion at the Interface between Low-k Spin-on Dielectric and underlying SiCO Barrier by Plasma Treatments
- Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams
- Nucleation and Growth Control of Al-CVD for Dual-Damascene Application
- Selective Dry Etching of HfO2 in CF4 and Cl2/HBr-Based Chemistries
- Application of Electron Projection Lithography to Via Formation in Two-Layer Metallization
- Effect of Hf Sources, Oxidizing Agents, and NH3/Ar Plasma on the Properties of HfAlOx Films Prepared by Atomic Layer Deposition
- High-Speed Proximity Effect Correction System for Electron-Beam Projection Lithography by Cluster Processing
- Physical and Electrical Properties of HfAlOx Films Prepared by Atomic Layer Deposition Using NH3/Ar Plasma
- Highly Accurate Proximity Effect Correction for 100 kV Electron Projection Lithography
スポンサーリンク