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Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan | 論文
- Novel Air-gap Formation Technology Using Ru Barrier Metal for Cu Interconnects with High Reliability and Low Capacitance
- Fabrication of 70-nm-Pitch Two-Level Interconnects by using Extreme Ultraviolet Lithography
- Resolution Enhancement for Beyond-22-nm Node Using Extreme Ultraviolet Exposure Tool
- Flare Impact and Correction for Critical Dimension Control with Full-Field Exposure Tool
- Trench Sidewall Elimination Effect on Line-to-Line Leakage Current in Scalable Porous Silica ($k= 2.1$)/Cu Interconnect Structure
- Characterization of Metal/High-$k$ Structures Using Monoenergetic Positron Beams
- Lithographic Performance of Extreme Ultravolet Full-Field Exposure Tool at Selete
- Extreme Ultraviolet Lithography Using Small-Field Exposure Tool: Current Status
- Application of Extreme Ultraviolet Lithography to Test Chip Fabrication
- In-situ Contamination Thickness Measurement by Novel Resist Evaluation System at NewSUBARU
- Impact of High Temperature Annealing on Traps in Physical-Vapor-Deposited-TiN/SiO2/Si Analyzed by Positron Annihilation
- Ultraviolet-Curing Mechanism of Porous-SiOC
- Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties