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Semiconductor And Integrated Circuits Division Hitachi Ltd. | 論文
- Relation between Ge(2) Center and 11.9 mT Hyperfine Structure of ESR Spectra in Ge-Doped Silica Fibers : Magnetism, Magnetic Materials and Devices
- Gamma-Ray Induced 2 eV Optical Absorption Band in Pure-Silica Core Fibers
- The 1.52μm Absorption Band in Optical Fibers Induced by Hydrogen Treatment
- Influence of Doping Impurities on Stacking Fault Generation in Thermally Oxidized Silicon
- High Expression of the Second Lysine Decarboxylase Gene, ldc, in Escherichia coli WC196 Due to the Recognition of the Stop Codon (TAG), at a Position Which Corresponds to the 33th Amino Acid Residue of σ^, as a Serine Residue by the Amber Suppressor,
- RpoS-Dependent Expression of the Second Lysine Decarboxylase Gene in Escherichia coli
- ^V and ^Mn Hyperfine Fields in the L2_1-Type Fe_2Mn_V_xSi and Fe_2T_Cr_xSi (T=V, Mn) Compounds
- Investigation of Low Loss and High Reliability Encapsulation Technology in Large-Area, High-Power Semiconductor Devices
- Characterization of Damaged Layer Using AC Surface Photovoltage in Silicon Wafers
- A 5-mW, 10-ns Cycle TLB Using a High-Performance CAM with Low-Power Match-Detection Circuits (Special Issue on ULSI Memory Technology)
- Effect of Oxide Charge Density in Passivation Films on Breakdown Voltage of Planar Diodes
- Large 1/f Noise in Polysilicon TFT Loads and its Effects on the Stability of SRAM Cells