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School Of Electrical Engineering Wonkwang University | 論文
- 2-bit/cell Characteristics of High-Density and High-Performance SONOS Flash Memory Cell with Recessed Channel Structure
- Device Design Consideration for 50nm Dynamic Random Access Memory Using Bulk FinFET
- Threshold Voltage Behavior of Body-Tied FinFET (OMEGA MOSFET) with Respect to Ion Implantation Conditions
- Characteristics of Locally-Separated Channel FinFETs with Non-Overlapped Source/Drain to Gate for Sub-50nm DRAM Cell Transistors(Session2: Silicon Devices I)
- Characteristics of Locally-Separated Channel FinFETs with Non-Overlapped Source/Drain to Gate for Sub-50nm DRAM Cell Transistors(Session2: Silicon Devices I)
- Device Design of SONOS Flash Memory Cell with Saddle Type Channel Structure
- Two-Bit/Cell Programming Characteristics of High-Density NOR-Type Flash Memory Device with Recessed Channel Structure and Spacer-Type Nitride Layer
- Time-Varying Body Instability and Low-Frequency Noise Characteristics of Mini-Field-Dual-Body Silicon-on-Insulator Structure for Analog-Digital Mixed-Mode Circuits
- AC Floating Body Effects and 1/f Noise Characteristics of Dual Body SOI Structure for Analog-Digital Mixed Mode Circuit
- Isotropic/Anisotropic Selective Epitaxial Growth of Si on Local Oxidation of Silicon (LOCOS) Patterned Si (100) Substrate by Cold Wall Ultrahigh Vacuum Chemical Vapor Deposition (UHV-CVD)
- [Invited]Double-Gate MOSFETs for Nano CMOS Technology : Body-tied Double-Gate MOSFETs(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
- [Invited] Double-Gate MOSFETs for Nano CMOS Technology : Body-tied Double-Gate MOSFETs (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
- Silicon Nano-Crystal Memory with Tunneling Nitride
- Modified Saddle MOSFETs for Sub-50nm DRAM Technology(Session 1 Silicon Devices I,AWAD2006)
- Gate Workfunction Engineering of Bulk FinFETs for Sub-50nm DRAM Cell Transistors