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School Of Electrical Engineering Seoul National University | 論文
- Dependence of Contact Resistance on Substrate Doping and Impact of Mixed Ion Implantation
- Characteristics of intermixed InGaAs/InGaAsP Multi-Quantum-Well Structure
- Electronic Structure Simulation of Chromium Aluminum Oxynitride by Discrete Variational-Xa Method and X-Ray Photoelectron Spectroscopy
- Lateral Silicon Field-Emission Devices using EIectron Beam Lithography
- Silicon Nano-Crystal Memory with Tunneling Nitride
- Metal FEAs Fabricated with Local Oxidation of Polysilicon for Large-Area Display Applications
- Metal FEAs Fabricated with Local Oxidation of Polysilicon for Large-Area Display Applications
- Monte Carlo Simulation of Single-Electron Nanocrystal Memories
- Intermixing Characteristics of Strained-InGaAs/InGaAsP Multiple Quantum Well Structure Using Impurity-Free Vacancy Diffusion
- Non-Quasi-Static Small-Signal Model of RF MOSFETs Valid up to 110GHz
- Realiable measurement of the secondary electron emission coefficient γ of MgO films by pulsed ion beam technique
- New Recursive Least Squares Algorithms without Using the Initial Information
- MODELING OF MICRODISCHARGE IN AC-PDP
- On State Avoidance Policies for Non-Ordinary Controlled Petri Nets with Uncontrollable Transitions
- New Structure of Optical Fiber Protection Cable Using Helical Composite Spring
- New Characteristic Equation of Three-Dimensional Integral Imaging System and its Applications
- A Trench-Gate Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor with the p^+ Cathode Well
- Probability of Error for a Hybrid DS/SFH Spread-Spectrum System over a Nakagami Fading Channel in the Presence of Multiple Tone Jamming
- A Confinement-Collector GaAs Switching Device Prepared by Molecular Beam Epitaxy
- 4-bit FinFET SONOS flash memory: Optimization of structure and 3D numerical simulation (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))