スポンサーリンク
School Of Electrical Engineering And Computer Science Seoul National University | 論文
- CMOS low-noise amplifer with noise suppression technique from gate resistance (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- CMOS low-noise amplifer with noise suppression technique from gate resistance (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Detection for Space-Time Block Coding over Time-Selective Fading Channels
- Joint AIC and ML Decoder Scheme for a Space-Time Coded DS-CDMA System(Wireless Communication Technology)
- A Robust Detection Scheme of Orthogonal Space-Time Block Codes over Very Fast Fading Channels(Wireless Communication Technologies)
- Joint Channel Estimation and Phase Noise Suppression for OFDM Systems
- On the Traffic-Distribution Characteristics of Parallel Switching Architectures
- Extraction of Vertical, Lateral Locations and Energies of Hot-Electrons-Induced Traps through the Random Telegraph Noise
- An in-plane 3-axis inertial measurement unit with 16-bit over-sampled capacitive readout ASIC (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- An in-plane 3-axis inertial measurement unit with 16-bit over-sampled capacitive readout ASIC (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Improving the Cell Characteristics Using SiN Liner at Active Edge in 4 Gbits NAND Flash Memories
- 30 nm Triple-Gate In0.7GaAs HEMTs Fabricated by Damage-Free SiO2/SiNx Sidewall Process and BCB Planarization
- Moisture Permeation through Ultrathin TiO_2 Films Grown by Atomic Layer Deposition
- Simple Wide-Band Metal-Insulator-Metal (MIM) Capacitor Model for RF Applications and Effect of Substrate Grounded Shields
- Electrostatic Discharge Effects on AlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates
- Highly Manufacturable and Reliable 80-nm Gate Twin Silicon–Oxide–Nitride–Oxide–Silicon Memory Transistor
- Simultaneous Extraction of Locations and Energies of Two Independent Traps in Gate Oxide From Four-Level Random Telegraph Signal Noise
- Characterization of Sensitivity and Resolution of Silicon Resistive Probe
- O-6 Emission Characteristics of VOCs with the Lightweight Panel Composition(Session)