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School Of Advanced Materials Engineering And Research Center For Advanced Materials Development Chon | 論文
- Self-assembled GaN nano-column grown on Si(111) substrate using Au+Ga alloy seeding method by MOCVD
- Growth of InN on patterned sapphire substrates and its characterization
- High brightness InGaN/GaN blue LED realized by a 2''×6 MOCVD system
- Characteristics of p-type InGaN grown by metalorganic chemical vapor depostion
- Multiwavelength emitting InGaN/GaN quantum well grown on V-shaped GaN (1101) microfacet
- High-Brightness GaN-Based Light-Emitting Diodes on Si Using Wafer Bonding Technology
- GaN Nanowires with $\text{Au}+\text{Ga}$ Solid Solution Grown on an Si(111) Substrate by Metalorganic Chemical Vapor Deposition
- InN Nanocolumns Grown on a Si(111) Substrate Using Au+In Solid Solution by Metal Organic Chemical Vapor Deposition
- Exposure Time Variation Method Using DMD for Microstereolithography
- High Brightness InGaN/GaN Blue Light Emitting Diode Realized by a $6\times 2''$ MOCVD System
- Self-Assembled GaN Nano-Column Grown on Si(111) Substrate Using Au+Ga Alloy Seeding Method by Metalorganic Chemical Vapor Deposition
- Epitaxial Growth of Crack-Free GaN on Patterned Si(111) Substrate
- Free-Standing GaN Layer by Combination of Electrochemical and Photo-Electrochemical Etching
- Free-Standing GaN Layer by Combination of Electrochemical and Photo-Electrochemical Etching